SI1021R datasheet(1/4 Pages) VISHAY

Il numero della parte	SI1021R

Spiegazioni elettronici	P-Channel 60-V (D-S) MOSFET

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Si1021R

Vishay Siliconix

New Product

Document Number: 71410

S-21120—Rev. C, 01-Jul-02

www.vishay.com

1

P-Channel 60-V (D-S) MOSFET

PRODUCT SUMMARY

V(BR)DSS(min) (V)

rDS(on) (W)

VGS(th) (V)

ID (mA)

–60

4 @ VGS = –10 V

–1 to –3.0

–190

FEATURES

BENEFITS

APPLICATIONS

D High-Side Switching

D Low On-Resistance: 4 Ω

D Low Threshold: –2 V (typ)

D Fast Switching Speed: 20 ns (typ)

D Low Input Capacitance: 20 pF (typ)

D Miniature Package

D Gate-Source ESD Protection

D Ease in Driving Switches

D Low Offset Voltage

D Low-Voltage Operation

D High-Speed Circuits

D Easily Driven Without Buffer

D Small Board Area

D Drivers: Relays, Solenoids, Lamps, Hammers,

Displays, Memories, Transistors, etc.

D Battery Operated Systems

D Power Supply Converter Circuits

D Solid-State Relays

Marking Code: F

SC-75A

(SOT-416)

Top View

2

1

S

D

G

3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

–60

Gate-Source Voltage

VGS

"20

V

_

TA = 25_C

–190

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

–135

mA

Pulse Drain Currentb

IDM

–650

TA = 25_C

250

Power Dissipationa

TA = 85_C

PD

130

mW

Maximum Junction-to-Ambienta

RthJA

500

_C/W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

Notes

a.

Surface mounted on FR4 board.

b.

Pulse width limited by maximum junction temperature.

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