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BDY57 Scheda tecnica(PDF) 2 Page - List of Unclassifed Manufacturers |
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BDY57 Scheda tecnica(HTML) 2 Page - List of Unclassifed Manufacturers |
2 / 3 page COMSET SEMICONDUCTORS 2/3 BDY57 – BDY58 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDY57 80 - - VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=100 mA, IB=0 BDY58 125 - - V VCE(SAT) Collector-Emitter saturation Voltage (*) IC=10 A, IB=1.0 A BDY57 BDY58 -0.5 1.4 V BDY57 120 - - V(BR)CBO Collector-Base Breakdown Voltage (*) IC=5.0mA, IE=0 BDY58 160 - - V V(BR)EBO Emitter-Base Breakdown Voltage (*) IE=5.0 A, IC=0 BDY57 BDY58 -0.5 1.4 V 1.0 ICBO Collector-Base Cutoff Current VCB=120 V IE=0 V BDY57 BDY58 -0.5 0.5 mA ICER Collector-Emitter Cutoff Current VCE=80 V RBE=10 Ω TCASE=100°C BDY57 BDY58 -- 10 mA IEBO Emitter-Base Cutoff Current VEB=10 V IC=0 V BDY57 BDY58 - - 0.25 0.5 mA VCE=4 V, IC=10 A BDY57 BDY58 20 - 60 VCE=4 V, IC=20 A BDY57 BDY58 -15 - h21E Static Forward Current transfer ratio (*) VCE=4 V, IC=10 A, TCASE=- 30°C BDY57 BDY58 10 - - V fT Transition Frequency VCE=15 V, IC=1.0 A, f=10 MHz BDY57 BDY58 10 30 - MHz td + tr Turn-on time IC=15 A, IB=1.5 A BDY57 BDY58 -0.25 1 µs |
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