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FQPF32N12V2 Scheda tecnica(PDF) 3 Page - Fairchild Semiconductor

Il numero della parte FQPF32N12V2
Spiegazioni elettronici  120V N-Channel MOSFET
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Produttore elettronici  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF32N12V2 Scheda tecnica(HTML) 3 Page - Fairchild Semiconductor

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Rev. A, December 2003
©2003 Fairchild Semiconductor Corporation
Typical Characteristics
10
-1
10
0
10
1
10
0
10
1
10
2
V
GS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
※ Notes :
1. 250μ s Pulse Test
2. T
C = 25
V
DS, Drain-Source Voltage [V]
2468
10
10
-1
10
0
10
1
10
2
175
oC
25
oC
-55
oC
※ Notes :
1. V
DS
= 40V
2. 250μ s Pulse Test
V
GS, Gate-Source Voltage [V]
0
2040
6080
100
120
0
20
40
60
80
100
120
140
160
V
GS
= 20V
V
GS = 10V
※ Note : T
J
= 25℃
I
D, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
10
2
175℃
※ Notes :
1. V
GS
= 0V
2. 250μ s Pulse Test
25℃
V
SD, Source-Drain voltage [V]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
3500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
010
20
30
40
50
0
2
4
6
8
10
12
V
DS = 60V
V
DS = 30V
V
DS = 96V
※ Note : I
D = 32A
Q
G, Total Gate Charge [nC]
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature


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