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UC1612J Scheda tecnica(PDF) 1 Page - Texas Instruments

Il numero della parte UC1612J
Spiegazioni elettronici  Dual Schottky Diode
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UC1612J Scheda tecnica(HTML) 1 Page - Texas Instruments

  UC1612J Datasheet HTML 1Page - Texas Instruments UC1612J Datasheet HTML 2Page - Texas Instruments UC1612J Datasheet HTML 3Page - Texas Instruments UC1612J Datasheet HTML 4Page - Texas Instruments  
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UC1612
UC3612
Dual Schottky Diode
Monolithic Two Diode Array
Exceptional Efficiency
Low Forward Voltage
Fast Recovery Time
High Peak Current
Small Size
The two-diode array is designed for high-current, low duty-cycle
applications typical of flyback voltage clamping for inductive loads.
The use of Schottky diode technology features high efficiency
through lowered forward voltage drop and decreased reverse recov-
ery time.
This single monolithic chip is fabricated in hermetic CERDIP as well
as copper leaded plastic MINIDIP and SOIC surface mount power
pack. The UC1612 in ceramic is designed for
−55°C to +125°C
environments, but with reduced peak current capability; while the
UC3612 has higher current rating over a 0°C to +70°C ambient tem-
perature range.
FEATURES
DESCRIPTION
ABSOLUTE MAXIMUM RATINGS
Peak Inverse Voltage (per diode) . . . . . . . . . . . . . . . . . . . .50V
Peak Forward Current, UC3612 . . . . . . . . . . . . . . . . . . . . . .3A
Peak Forward Current, UC1612 . . . . . . . . . . . . . . . . . . . . . .1A
Storage Temperature Range . . . . . . . . . . . . .
−65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . .
−55°C to +150°C
Lead Temperature (Soldering, 10 seconds) . . . . . . . . . . .300°C
Currents are positive into, negative out of the specified terminal.
Consult Packaging Section of Databook for thermal limitations
and considerations of packages.
CONNECTION DIAGRAM
8/94
DIL-8, SOIC-8
(Top View)
J, N, or DP Package
Pins 2, 3, 6, 7 are connected to substrate and must be electrically isolated.


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