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UC1612J Scheda tecnica(PDF) 2 Page - Texas Instruments

Il numero della parte UC1612J
Spiegazioni elettronici  Dual Schottky Diode
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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UC1612J Scheda tecnica(HTML) 2 Page - Texas Instruments

  UC1612J Datasheet HTML 1Page - Texas Instruments UC1612J Datasheet HTML 2Page - Texas Instruments UC1612J Datasheet HTML 3Page - Texas Instruments UC1612J Datasheet HTML 4Page - Texas Instruments  
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UC1612
UC3612
ELECTRICAL CHARACTERISTICS All specifications apply to each individual diode. TJ = 25°C except as noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Leakage Drop
IF = 100mA
0.49
0.55
V
IF = 1A
0.9
1.0
V
Leakage Current
VR = 40V
.01
0.1
mA
VR = 40V, TJ = 100°C
0.1
1.0
mA
Reverse Recovery
0.5A Forward to 0.5A Reverse
15
ns
Forward Recovery
1A Forward to 1.1V Recovery
30
ns
Junction Capacitance
VR = 5V
70
pF
Note: At forward currents of greater than 1.0A, a parasitic current of approximately 10mA may be collected by adjacent diodes.
UNITRODE INTEGRATED CIRCUITS
7 CONTINENTAL BLVD.
• MERRIMACK, NH 03054
TEL. (603) 424-2410
• FAX (603) 424-3460
Reverse Current vs Voltage
Forward Voltage vs Current
2


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