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BC182B Scheda tecnica(PDF) 1 Page - Fairchild Semiconductor |
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BC182B Scheda tecnica(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2003 Fairchild Semiconductor Corporation Rev. A, August 2003 Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 50 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current - Continuous 100 mA TJ, TSTG Storage Junction Temperature Range - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 2mA, IB = 0 50 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 6 V ICBO Collector Cut-off Current VCB = 50V, VBE = 0 15 nA IEBO Emitter-Base Leakage Current VEB = 4V, IE = 0 15 nA On Characteristics hFE DC Current Gain VCE = 5V, IC = 10µA VCE = 5V, IC = 100mA 40 80 VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA 0.25 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 100mA, IB = 5mA 1.2 V VBE(on) Base-Emitter On Voltage VCE = 5V, IC = 2mA 0.55 0.7 V Dynamic Characteristics fT Current Gain Bandwidth Product VCE = 5V, IC = 10mA, f = 100MHz 150 MHz Cob Output Capacitance VCE = 10V, IC = 0, f = 1MHz 5 pF hfe Small Signal Current Gain VCE = 5V, IC = 2mA, f = 1KHz 240 500 NF Noise Figure VCE = 5V, IC = 0.2mA RS = 2KΩ, f = 1KHz, BW = 200Hz 10 dB BC182B NPN General Purpose Amplifier • This device is designed for general purpose amplifier application at collector currents to 100mA. • Sourced from process 10. 1. Collector 2. Base 3. Emitter TO-92 1 |
Codice articolo simile - BC182B |
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Descrizione simile - BC182B |
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