IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYT80N90C3

IXYH80N90C3

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Notes:

1. Pulse test, t

 300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

Symbol Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

I

23

38

S

C

4550

pF

C

oes

V

243

pF

C

res

77

pF

Q

g(on)

145

nC

Q

ge

I

42

nC

Q

gc

65

nC

t

d(on)

34

ns

t

ri

103

ns

E

on

4.3

mJ

t

d(off)

90

ns

t

fi

86

ns

E

1.9

2.7

mJ

t

d(on)

34

ns

t

ri

100

ns

E

on

5.7

mJ

t

d(off)

103

ns

t

fi

98

ns

E

off

2.5

mJ

R

thJC

0.18 °C/W

R

thCS

TO-247

0.21

°C/W

Inductive load, T

I

V

Note 2

Inductive load, T

I

V

Note 2

TO-247 Outline

Terminals: 1 - Gate

2 - Collector

3 - Emitter

TO-268 Outline

Terminals: 1 - Gate

2,4 - Collector

3 - Emitter

e

P

1

2

3

Dim.

Millimeter

Inches

Min.

Max.

Min. Max.

A

4.7

5.3

.185

.209

A

1

2.2

2.54

.087

.102

A

2

2.2

2.6

.059

.098

b

1.0

1.4

.040

.055

b

1

1.65

2.13

.065

.084

b

2

2.87

3.12

.113

.123

C

.4

.8

.016

.031

D

20.80 21.46

.819

.845

E

15.75 16.26

.610

.640

e

5.20

5.72 0.205 0.225

L

19.81 20.32

.780

.800

L1

4.50

.177

P

3.55

3.65

.140

.144

Q

5.89

6.40 0.232 0.252

R

4.32

5.49

.170

.216

S

6.15 BSC

242 BSC