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LM3212 Scheda tecnica(PDF) 4 Page - Texas Instruments |
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LM3212 Scheda tecnica(HTML) 4 Page - Texas Instruments |
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4 / 25 page  LM3212 SNOSB37C – DECEMBER 2008 – REVISED APRIL 2013 www.ti.com ELECTRICAL CHARACTERISTICS (1) (2) (3) Limits in standard typeface are for TA = TJ = 25°C. Limits in boldface type apply over the full operating ambient temperature range ( −30°C ≤ TA = TJ ≤ +85°C). Unless otherwise noted, all specifications apply to the Typical Application Circuit (page 1) with: PVIN = VDD = AUTO_BY = EN = 3.6V. Symbol Parameter Conditions Min Typ Max Units VCON = 0.20V, VIN ≤ 4.2V (3) 0.465 0.5 0.535 Feedback voltage at minimum VFB, MIN V setting VCON = 0.32V, VIN =< 5.5V (3) 0.765 0.8 0.835 VFB, MAX Feedback voltage at maximum VCON = 1.36V, VIN = 3.9V (3) 3.325 3.4 3.475 V setting ISHDN Shutdown supply current EN = SW = VCON = 0V(4) 0.02 4 µA Iq DC bias current into VDD VCON = 0V, FB = 0V 0.85 0.905 mA No Switching(5) RDSON(P) Pin-pin resistance for large PFET ISW = 200 mA, VCON = 0.6V 120 96 m Ω 150 RDSON(P) Pin-pin resistance for small PFET ISW = 200 mA, VCON = 0.42V 380 312 m Ω 450 RDSON(N) Pin-pin resistance for NFET ISW = −200 mA, VCON = 0.1V 135 110 m Ω 165 RACB Active Current Assist Bypass VCON = 1V, max value at VIN = 3.1V & 37 53 m Ω Resistance IACB = 200 mA ILIM,PSteady-State Positive steady-state peak current VCON = 0.6V(6) 1340 1450 1650 mA limit ILIM, P_ACB, GSM Positive Active Current Assist VCON = 0.6V, VACB = 3V (6) 1400 1600 1750 mA peak current limit ILIM, NFET NFET Switch negative peak VCON = 1V(6) -1125 -1000 -875 mA current limit ILIM, N_ACB, GSM Active Current Assist negative VCON = 1V, VACB = 1.5V (6) −2300 −1900 mA peak current limit FOSC Internal oscillator frequency 1.44 1.6 1.76 MHz VIH_AUTO_BY, EN Logic high input threshold 1.2 V VIL_AUTO_BY,EN Logic low input threshold 0.5 V IPIN_EN Pin pull down current 5 10 µA IPIN_AUTO_BY Pin pull up current −10 −5 µA VCON, ON VCON Threshold for turning on 0.1 0.15 V switches ICON VCON pin leakage current VCON = 1.0V −1 1 µA Gain VCON to VOUT Gain 0.20V ≤ VCON ≤ 1.36V 2.5 V/V (1) All voltages are with respect to the potential at the GND pins. The LM3212 is designed for mobile phone applications where turn-on after power-up is controlled by the system controller and where requirements for a small package size overrule increased die size for internal Under Voltage Lock-Out (UVLO) circuitry. Thus, it should be kept in shutdown by holding the EN pin low until the input voltage exceeds 2.7V. (2) Min and Max limits are ensured by design, test, or statistical analysis. Typical numbers are not ensured, but do represent the most likely norm. Due to the pulsed nature of the testing TA = TJ for the electrical characteristics table. (3) The parameters in the electrical characteristics table are tested under open loop conditions at PVIN = VDD = 3.6V. For performance over the input voltage range and closed-loop results, refer to the datasheet curves. (4) Shutdown current includes leakage current of PFET. (5) IQ specified here is when the part is not switching. For operating input current at no load, refer to datasheet curves. (6) Current limit is built-in, fixed, and not adjustable. 4 Submit Documentation Feedback Copyright © 2008–2013, Texas Instruments Incorporated Product Folder Links: LM3212 |
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