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IXXX160N65C4 Scheda tecnica(PDF) 1 Page - IXYS Corporation |
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IXXX160N65C4 Scheda tecnica(HTML) 1 Page - IXYS Corporation |
1 / 6 page © 2012 IXYS CORPORATION, All Rights Reserved XPTTM 650V IGBTs GenX4TM IXXK160N65C4 IXXX160N65C4 V CES = 650V I C110 = 160A V CE(sat) ≤≤≤≤≤ 2.1V t fi(typ) = 30ns Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 175°C 650 V V CGR T J = 25°C to 175°C, R GE = 1MΩ 650 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C= 25°C (Chip Capability) 290 A I LRMS Leads Current Limit 160 A I C110 T C = 110°C 160 A I CM T C = 25°C, 1ms 800 A SSOA V GE = 15V, TVJ = 150°C, RG = 1Ω I CM = 320 A (RBSOA) Clamped Inductive Load @V CE ≤ VCES t sc V GE = 15V, VCE = 360V, TJ = 150°C 10 μs (SCSOA) R G = 10Ω, Non Repetitive P C T C = 25°C 940 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C T L Maximum Lead Temperature for Soldering 300 °C T SOLD 1.6 mm (0.062in.) from Case for 10s 260 °C M d Mounting Torque (TO-264) 1.13/10 Nm/lb.in. F C Mounting Force (PLUS247) 20..120 /4.5..27 N/lb. Weight TO-264 10 g PLUS247 6 g DS100516A(02/13) Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250 μA, V GE = 0V 650 V V GE(th) I C = 250 μA, V CE = VGE 4.0 6.5 V I CES V CE = VCES, VGE = 0V 25 μA T J = 150°C 1.5 mA I GES V CE = 0V, VGE = ±20V ±200 nA V CE(sat) I C = 160A, V GE = 15V, Note 1 1.7 2.1 V T J = 150°C 2.1 V G = Gate E = Emitter C = Collector Tab = Collector TO-264 (IXXK) E G C PLUS247 (IXXX) G Tab Tab E C G Features Optimized for 20-60kHz Switching Square RBSOA Short Circuit Capability International Standard Packages High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Extreme Light Punch Through IGBT for 20-60kHz Switching Preliminary Technical Information |
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