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LM317LMX Scheda tecnica(PDF) 4 Page - Texas Instruments |
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LM317LMX Scheda tecnica(HTML) 4 Page - Texas Instruments |
4 / 37 page 4 LM317L-N SNVS775K – MARCH 2000 – REVISED APRIL 2016 www.ti.com Product Folder Links: LM317L-N Submit Documentation Feedback Copyright © 2000–2016, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and specifications. 6 Specifications 6.1 Absolute Maximum Rating (1) (2) MIN MAX UNIT Power dissipation Internally Limited Input-output voltage differential 40 V Operating junction temperature −40 125 °C Lead temperature (soldering, 4 seconds) 260 °C Storage temperature, Tstg −55 150 °C (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000 V may actually have higher performance. 6.2 ESD Ratings VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT Operating temperature −40 125 °C (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953. 6.4 Thermal Information THERMAL METRIC(1) LM317L-N UNIT TO-92 SOIC DSBGA 3 PINS 8 PINS 6 PINS 0.4-in Leads 0.125-in Leads RθJA Junction-to-ambient thermal resistance 180 160 165 290 °C/W RθJC(top) Junction-to-case (top) thermal resistance — 80.6 — — °C/W RθJB Junction-to-board thermal resistance — — — — °C/W ψJT Junction-to-top characterization parameter — 24.7 — — °C/W ψJB Junction-to-board characterization parameter — 135.8 — — °C/W RθJC(bot) Junction-to-case (bottom) thermal resistance — — — — °C/W |
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