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LM317LMX Scheda tecnica(PDF) 4 Page - Texas Instruments

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Il numero della parte LM317LMX
Spiegazioni elettronici  3-Terminal Adjustable Regulator
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
Logo TI1 - Texas Instruments

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4
LM317L-N
SNVS775K – MARCH 2000 – REVISED APRIL 2016
www.ti.com
Product Folder Links: LM317L-N
Submit Documentation Feedback
Copyright © 2000–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
If Military/Aerospace specified devices are required, contact the Texas Instruments Sales Office/Distributors for availability and
specifications.
6 Specifications
6.1 Absolute Maximum Rating
(1) (2)
MIN
MAX
UNIT
Power dissipation
Internally Limited
Input-output voltage differential
40
V
Operating junction temperature
−40
125
°C
Lead temperature (soldering, 4 seconds)
260
°C
Storage temperature, Tstg
−55
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Pins listed as ±2000
V may actually have higher performance.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Operating temperature
−40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
LM317L-N
UNIT
TO-92
SOIC
DSBGA
3 PINS
8 PINS
6 PINS
0.4-in
Leads
0.125-in
Leads
RθJA
Junction-to-ambient thermal resistance
180
160
165
290
°C/W
RθJC(top) Junction-to-case (top) thermal resistance
80.6
°C/W
RθJB
Junction-to-board thermal resistance
°C/W
ψJT
Junction-to-top characterization parameter
24.7
°C/W
ψJB
Junction-to-board characterization parameter
135.8
°C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance
°C/W


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