SM28VLT32-HT

www.ti.com

SLVSAO2C – NOVEMBER 2012 – REVISED MARCH 2013

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with

appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more

susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE

ORDERABLE PART NUMBER

TOP-SIDE MARKING

14-Pin HKN

SM28VLT32SHKN

28VLT32SHKN

–55°C to 210°C

KGD (Bare Die)

SM28LVT32SKGD3

N/A

(1)

For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI

web site at www.ti.com.

ABSOLUTE MAXIMUM RATINGS

(1)

over operating free-air temperature range (unless otherwise noted)

UNIT

VIO

Supply voltage range (for IO)

–0.3 V to 4.5 V

VCORE

Supply voltage range (for Core)

–0.3 V to 2.5 V

Input voltage range

Output voltage range

ESD

Electrostatic discharge (HBM, 1.5 k

Ω, 100 pF)

> 2000 V

Operating junction temperature range

–55°C to 215°C

(1)

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating

conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

PACKAGE DISSIPATION RATINGS

PACKAGE

JUNCTION TO AMBIENT

JUNCTION TO CASE (THERMAL PAD)

JUNCTION TO BOARD

HKN

63°C/W

0.84°C/W

55°C/W

RECOMMENDED OPERATING CONDITIONS

MIN

TYP

MAX

UNIT

VIO

Device supply voltage for IO

3.1

3.3

3.6

V

VCORE

Device supply voltage for Core

1.8

1.9

1.98

V

Junction temperature

–55

210

°C

ELECTRICAL CHARACTERISTICS: IO

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Input high voltage

2.5

V

Input low voltage

0.9

V

Output high current

-8

mA

Output low current

8

mA

Output high voltage

2.8

V

Output low voltage

0.8

V

Input capacitance

6.5

pF

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