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LM113QML Scheda tecnica(PDF) 2 Page - Texas Instruments

Il numero della parte LM113QML
Spiegazioni elettronici  Reference Diode
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LM113QML Scheda tecnica(HTML) 2 Page - Texas Instruments

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LM113QML, LM113QML-SP
SNVS367A – DECEMBER 2010 – REVISED APRIL 2013
www.ti.com
Schematic Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS
(1)
Power Dissipation(2)
100 mW
Reverse Current
50 mA
Forward Current
50 mA
Storage Temperature Range
−65°C ≤ TA ≤ +150°C
Lead Temperature (Soldering, 10 seconds)
300°C
Maximum Junction Temperature (TJmax)
+150°C
Operating Temperature Range
−55°C ≤ TA ≤ +125°C
Thermal Resistance
θJA
TO (Still Air)
440°C/W
TO (500LF / Min Air Flow)
TBD
CFP (Still Air)
218°C/W
CFP (500LF / Min Air Flow)
140°C/W
θJC
TO
80°C/W
CFP
27°C/W
Package Weight
TO
275mg
CFP
220mg
ESD Tolerance(3)
4000V
(1)
Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. Theensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2)
The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3)
Human body model, 1.5K
Ω in series with 100pF.
2
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Copyright © 2010–2013, Texas Instruments Incorporated
Product Folder Links: LM113QML LM113QML-SP
LM113QML is Obsolete


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