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SB130S Scheda tecnica(PDF) 1 Page - Diotec Semiconductor

Il numero della parte SB130S
Spiegazioni elettronici  Schottky Barrier Rectifier Diodes
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Produttore elettronici  DIOTEC [Diotec Semiconductor]
Homepage  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

SB130S Scheda tecnica(HTML) 1 Page - Diotec Semiconductor

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SB120S ... SB1100S
SB120S ... SB1100S
Schottky Barrier Rectifier Diodes
Schottky-Barrier-Gleichrichterdioden
Version 2015-04-20
Dimensions - Maße [mm]
Nominal current
Nennstrom
1 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...100 V
Plastic case
Kunststoffgehäuse
~DO-41
~DO-204AC
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
Forward voltage
Durchlass-Spannung
VF [V] 1)
SB120S
20
20
< 0.50
SB130S
30
30
< 0.50
SB140S
40
40
< 0.50
SB150S
50
50
< 0.70
SB160S
60
60
< 0.70
SB190S
90
90
< 0.85
SB1100S
100
100
< 0.85
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
IFAV
1 A2)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
10 A 2)
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25°C
IFSM
30 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
8 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
1
IF = 1 A,Tj = 25°C
2
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 0.77±0.07
Ø 2.6
-0.1


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