IXYP10N65C3D1 datasheet(6/7 Pages) IXYS

Il numero della parte	IXYP10N65C3D1

Spiegazioni elettronici	Optimized for 20-60kHz Switching

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Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

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6 / 7 page

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYP10N65C3D1

Fig. 20. Inductive Turn-on Switching Times vs.

Collector Current

0

10

20

30

40

50

60

70

80

90

4

6

8

10

12

14

16

18

20

IC - Amperes

12

14

16

18

20

22

24

26

28

30

t r i

td(on) - - - -

RG = 50Ω , VGE = 15V

VCE = 400V

TJ = 25ºC

TJ = 150ºC

Fig. 21. Inductive Turn-on Switching Times vs.

Junction Temperature

10

20

30

40

50

60

70

80

90

100

25

50

75

100

125

150

TJ - Degrees Centigrade

14

16

18

20

22

24

26

28

30

32

t r i

td(on) - - - -

RG = 50Ω , VGE = 15V

VCE = 400V

I C = 20A

I C = 10A

Fig. 19. Inductive Turn-on Switching Times vs.

Gate Resistance

0

20

40

60

80

100

120

140

160

50

60

70

80

90

100

110

120

RG - Ohms

0

10

20

30

40

50

60

70

80

t r i

td(on) - - - -

TJ = 150ºC, VGE = 15V

VCE = 400V

I C = 10A

I C = 20A

Fig. 22. Diode Forward Characteristics

0

5

10

15

20

25

30

00.5

11.5

22.5

3

VF (V)

TJ = 150ºC

TJ = 25ºC

Fig. 23. Reverse Recovery Charge vs. -diF/dt

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

100

200

300

400

500

600

700

800

900

-diF/ dt (A/µs)

TJ = 150ºC

VR = 400V

IF = 20A

10A

5A

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