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IXYN150N60B3 Scheda tecnica(PDF) 1 Page - IXYS Corporation |
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IXYN150N60B3 Scheda tecnica(HTML) 1 Page - IXYS Corporation |
1 / 6 page © 2013 IXYS CORPORATION, All Rights Reserved 600V XPTTM IGBT GenX3TM V CES = 600V I C110 = 130A V CE(sat) 2.20V t fi(typ) = 114ns Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 175°C 600 V V CGR T J = 25°C to 175°C, R GE = 1M 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C (Chip Capability) 240 A I LRMS Terminal Current Limit 200 A I C110 T C = 110°C 130 A I CM T C = 25°C, 1ms 720 A I A T C = 25°C 75 A E AS T C = 25°C 750 mJ SSOA V GE = 15V, TVJ = 150°C, RG = 2 I CM = 300 A (RBSOA) Clamped Inductive Load V CE VCES t sc V GE = 15V, VCE = 360V, TJ = 150°C 8 μs (SCSOA) R G = 82 , Non Repetitive P C T C = 25°C 830 W T J -55 ... +175 °C T JM 175 °C T stg -55 ... +175 °C V ISOL 50/60Hz t = 1min 2500 V~ I ISOL 1mA t = 1s 3000 V~ M d Mounting Torque 1.5/13 Nm/lb.in Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 30 g DS100548A(11/13) Symbol Test Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250μA, V GE = 0V 600 V V GE(th) I C = 250μA, V CE = VGE 3.0 5.5 V I CES V CE = VCES, VGE = 0V 25 μA T J = 150°C 1 mA I GES V CE = 0V, VGE = ±20V ±200 nA V CE(sat) I C = 150A, V GE = 15V, Note 1 1.86 2.20 V T J = 150°C 2.26 V Features Optimized for Low Conduction and Switching Losses miniBLOC, with Aluminium Nitride Isolation International Standard Package Isolation Voltage 2500V~ Optimized for 10-30kHz Switching Square RBSOA Avalanche Rated Short Circuit Capability High Current Handling Capability Advantages High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Motor Drives SMPS PFC Circuits Battery Chargers Welding Machines Lamp Ballasts Extreme Light Punch through IGBT for 10-30kHz Switching IXYN150N60B3 SOT-227B, miniBLOC G = Gate, C = Collector, E = Emitter either emitter terminal can be used as Main or Kelvin Emitter G E E C E153432 E Preliminary Technical Information |
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