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IXYN120N65C3D1 Scheda tecnica(PDF) 2 Page - IXYS Corporation

Il numero della parte IXYN120N65C3D1
Spiegazioni elettronici  International Standard Package
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Produttore elettronici  IXYS [IXYS Corporation]
Homepage  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXYN120N65C3D1 Scheda tecnica(HTML) 2 Page - IXYS Corporation

  IXYN120N65C3D1 Datasheet HTML 1Page - IXYS Corporation IXYN120N65C3D1 Datasheet HTML 2Page - IXYS Corporation IXYN120N65C3D1 Datasheet HTML 3Page - IXYS Corporation IXYN120N65C3D1 Datasheet HTML 4Page - IXYS Corporation IXYN120N65C3D1 Datasheet HTML 5Page - IXYS Corporation IXYN120N65C3D1 Datasheet HTML 6Page - IXYS Corporation IXYN120N65C3D1 Datasheet HTML 7Page - IXYS Corporation  
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IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN120N65C3D1
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692
7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
g
fs
I
C = 60A, VCE = 10V, Note 1
40
68
S
C
ies
6900
pF
C
oes
V
CE = 25V, VGE = 0V, f = 1MHz
585
pF
C
res
140
pF
Q
g(on)
265
nC
Q
ge
I
C = 120A, VGE = 15V, VCE = 0.5 • VCES
50
nC
Q
gc
110
nC
t
d(on)
28
ns
t
ri
29
ns
E
on
1.25
mJ
t
d(off)
127
ns
t
fi
46
ns
E
off
0.50
mJ
t
d(on)
27
ns
t
ri
30
ns
E
on
2.45
mJ
t
d(off)
156
ns
t
fi
60
ns
E
off
0.70
mJ
R
thJC
0.18 °C/W
R
thCS
0.05
°C/W
Notes:
1. Pulse test, t
 300μs, duty cycle, d  2%.
2. Switching times & energy losses may increase for higher V
CE(clamp), TJ or RG.
Inductive load, T
J = 150°C
I
C = 50A, VGE = 15V
V
CE = 400V, RG = 2
Note 2
Inductive load, T
J = 25°C
I
C = 50A, VGE = 15V
V
CE = 400V, RG = 2
Note 2
Reverse Diode (FRED)
Symbol Test Conditions
Characteristic Values
(T
J = 25°C Unless Otherwise Specified)
Min. Typ.
Max.
V
F
I
F = 100A, VGE = 0V, Note 1
3.0
V
T
J = 150°C
2.0
V
I
rr
T
J = 150°C
42
A
t
rr
T
J = 150°C
150
ns
R
thJC
0.38 °C/W
I
F = 100A, VGE = 0V, -diF/dt = 700A/μs,
V
R = 400V
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
SOT-227B miniBLOC (IXYN)


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