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IXYN100N65C3H1 Scheda tecnica(PDF) 4 Page - IXYS Corporation |
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IXYN100N65C3H1 Scheda tecnica(HTML) 4 Page - IXYS Corporation |
4 / 7 page IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYN100N65C3H1 Fig. 7. Transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 160 180 200 IC (A) TJ = - 40ºC 25ºC 150ºC Fig. 10. Reverse-Bias Safe Operating Area 0 40 80 120 160 200 100 200 300 400 500 600 700 VCE (V) TJ = 150ºC RG = 3Ω dv / dt < 10V / ns Fig. 8. Gate Charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 140 160 180 QG (nC) VCE = 325V IC = 70A IG = 10mA Fig. 9. Capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 VCE (V) f = 1 MHz Cies Coes Cres Fig. 12. Maximum Transient Thermal Impedance (IGBT) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Fig. 11. Forward-Bias Safe Operating Area 0.1 1 10 100 1000 1 10 100 1000 VDS (V) TJ = 175ºC TC = 25ºC Single Pulse 25µs 10ms 100ms VCE(sat) Limit 100µs 1ms DC |
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