IXYH50N65C3D1 datasheet(1/7 Pages) IXYS

Il numero della parte	IXYH50N65C3D1

Spiegazioni elettronici	Optimized for 20-60kHz Switching

Download	7 Pages

Scroll/Zoom	100%

Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

Logo

1 / 7 page

IXYH50N65C3D1

V

CES

= 650V

I

C110

= 50A

V

CE(sat) 



 2.10V

t

fi(typ)

= 26ns

DS100628(9/14)

Extreme Light Punch Through

IGBT for 20-60 kHz Switching

Features



Optimized for 20-60kHz Switching



Square RBSOA



Anti-Parallel Fast Diode



Avalanche Rated



Short Circuit Capability



International Standard Package

Advantages



High Power Density



Extremely Rugged



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts



High Frequency Power Inverters

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

CES

I

C

= 250

A, V

GE = 0V

650

V

GE(th)

I

C

= 250

A, V

CE = VGE

3.5

6.0

V

I

CES

V

CE = VCES, VGE = 0V

50

A

T

J = 150C

1.25 mA

I

GES

V

CE = 0V, VGE = 20V

100 nA

V

CE(sat)

I

C

= 36A, V

GE = 15V, Note 1

1.73

2.10

V

T

J = 150C

2.10

V

Advance Technical Information

Symbol

Test Conditions

Maximum Ratings

V

CES

T

J

= 25°C to 175°C

650

V

CGR

T

J

= 25°C to 175°C, R

GE = 1M

650

V

GES

Continuous

±20

V

GEM

Transient

±30

V

I

C25

T

C = 25°C

132

A

I

C110

T

C = 110°C

50

A

I

F110

T

C = 110°C

50

A

I

CM

T

C = 25°C, 1ms

250

A

I

A

T

C = 25°C

25

A

E

AS

T

C = 25°C

400

mJ

SSOA

V

GE = 15V, TVJ = 150°C, RG = 5

I

CM = 100

A

(RBSOA)

Clamped Inductive Load

@V

CE  VCES

t

sc

V

GE = 15V, VCE = 360V, TJ = 150°C

8

μs

(SCSOA)

R

G = 82, Non Repetitive

P

C

T

C = 25°C

600

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque

1.13/10

Nm/lb.in

Weight

6

g

XPTTM 650V IGBT

GenX3TM w/ Diode

G = Gate

C

= Collector

E = Emitter

Tab = Collector

TO-247 (IXYH)

G

C

E

Tab

Codice articolo simile - IXYH50N65C3D1

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
IXYS Corporation	IXYH50N65C3	269Kb / 6P	Preliminary Technical Information
	IXYH50N65C3	269Kb / 6P	Preliminary Technical Information
	IXYH50N65C3	269Kb / 6P	Preliminary Technical Information
	IXYH50N65C3H1	249Kb / 8P	Optimized for 20-60kHz Switching

More results

Descrizione simile - IXYH50N65C3D1

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
IXYS Corporation	IXYP10N65C3D1	214Kb / 7P	Optimized for 20-60kHz Switching
	IXYP15N65C3	188Kb / 6P	Optimized for 20-60kHz Switching
	IXYP20N65C3D1M	193Kb / 6P	Optimized for 20-60kHz Switching
	IXYT30N65C3H1HV	266Kb / 6P	Optimized for 20-60kHz Switching
	IXYP10N65C3	211Kb / 6P	Optimized for 20-60kHz Switching
	IXYP10N65C3D1M	194Kb / 6P	Optimized for 20-60kHz Switching
	IXYH100N65C3	231Kb / 6P	Optimized for 20-60kHz Switching
	IXYP15N65C3D1M	193Kb / 6P	Optimized for 20-60kHz Switching
	IXYH40N65C3H1	182Kb / 7P	Optimized for 20-60kHz Switching
	IXYH50N65C3H1	249Kb / 8P	Optimized for 20-60kHz Switching

More results

IXYH50N65C3D1 Scheda tecnica(PDF) 1 Page - IXYS Corporation

IXYH50N65C3D1 Scheda tecnica(HTML) 1 Page - IXYS Corporation

Codice articolo simile - IXYH50N65C3D1

Descrizione simile - IXYH50N65C3D1

Html Pages

1 2 3 4 5 6 7

Scheda tecnica Scarica

Link URL