Motore di ricerca datesheet componenti elettronici |
|
MTB080P06J3-0-T3-G Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp. |
|
MTB080P06J3-0-T3-G Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 5/ 9 MTB080P06J3 CYStek Product Specification Typical Characteristics (Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0 102030 Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250 μA ID=-1mA Ciss -VDS, Drain-Source Voltage(V) C oss Crss f=1MHz Maximum Safe Operating Area 0.1 1 10 100 0.1 1 10 100 1000 -VDS, Drain-Source Voltage(V) RDS(ON) Limited DC 10ms 100ms 1ms 100 μs 1s TC=25°C, Tj=150°C, VGS=-10V, RθJC=4°C/W, single pulse Gate Charge Characteristics 0 2 4 6 8 10 036 9 12 15 Qg, Total Gate Charge(nC) ID=-10A VDS=-48V Maximum Drain Current vs Case Temperature 0 2 4 6 8 10 12 14 16 25 50 75 100 125 150 175 TC, Case Temperature(°C) VGS=-10V, Tj(max)=150°C, RθJC=4°C/W, single pulse Typical Transfer Characteristics 0 2 4 6 8 10 12 14 16 18 20 01 23 45 67 89 10 -VGS, Gate-Source Voltage(V) VDS=-10V |
Codice articolo simile - MTB080P06J3-0-T3-G |
|
Descrizione simile - MTB080P06J3-0-T3-G |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |