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MTB020N03KJ3-0-T3-G Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp. |
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MTB020N03KJ3-0-T3-G Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C143J3 Issued Date : 2015.12.15 Revised Date : 2016.02.22 Page No. : 4/9 MTB020N03KJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V VGS=3.5V 4V 5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 10 100 0.01 0.1 1 10 100 ID, Drain Current(A) VGS=4V VGS=4.5V VGS=10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 IDR, Reverse Drain Current(A) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 40 80 120 160 200 0 2 4 6 8 10 VGS, Gate-Source Voltage(V) ID=20A Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=20A RDS(ON)@Tj=25°C : 13mΩtyp. |
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