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FZT948 Scheda tecnica(PDF) 4 Page - Diodes Incorporated

Il numero della parte FZT948
Spiegazioni elettronici  20V PNP MEDIUM POWER TRANSISTOR
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

FZT948 Scheda tecnica(HTML) 4 Page - Diodes Incorporated

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FZT948
Document number: DS33189 Rev. 3 - 2
4 of 7
www.diodes.com
November 2015
© Diodes Incorporated
FZT948
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-40
-55
-
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9)
BVCER
-40
-55
-
V
IC = -1µA, RB 1kΩ
Collector-Emitter Breakdown Voltage (Note 9)
BVCEO
-20
-30
-
V
IC = -10mA
Emitter-Base Breakdown Voltage
BVEBO
-7
-8
-
V
IE = -100µA
Collector Cut-Off Current
ICBO
-
-
-
-
-50
-1
nA
µ
A
VCB = -30V
VCB = -30V, TA = +100°C
Collector Cut-Off Current
ICER
R
1kΩ
-
-
-
-
-50
-1
nA
µA
VCB = -30V
VCB = -30V, TA = +100°C
Emitter Cut-Off Current
IEBO
-
-
-10
nA
VEB = -6V
DC Current Transfer Static Ratio (Note 9)
hFE
100
200
-
-
IC = -10mA, VCE = -1V
100
200
300
IC = -1A, VCE = -1V
75
160
-
IC = -5A, VCE = -1V
60
130
-
IC = -10A, VCE = -1V
-15
40
-
IC = -20A, VCE = -2V
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
-
-60
-130
mV
IC = -0.5A, IB = -10mA
-
-110
-180
IC = -2A, IB = -200mA
-
-200
-280
IC = -4A, IB = -400mA
-
-360
-450
IC = -6A, IB = -250mA
Base-Emitter Saturation Voltage (Note 9)
VBE(sat)
-
-1050
-1200
mV
IC = -5A, IB = -300mA
Base-Emitter Turn-On Voltage (Note 9)
VBE(on)
-
-870
-1050
mV
IC = -6A, VCE = -1V
Transitional Frequency (Note 9)
fT
-
80
-
MHz
IC = -100mA, VCE = -10V,
f = 50MHz
Output Capacitance
Cobo
-
163
-
pF
VCB = -10V, f = 1MHz
Switching Time
tON
-
120
-
ns
VCC = -10V, IC = -4A,
IB1 = -IB2 = -400mA
tOFF
-
126
-
Note:
9.
Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.


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