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FZT948 Scheda tecnica(PDF) 4 Page - Diodes Incorporated |
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FZT948 Scheda tecnica(HTML) 4 Page - Diodes Incorporated |
4 / 7 page FZT948 Document number: DS33189 Rev. 3 - 2 4 of 7 www.diodes.com November 2015 © Diodes Incorporated FZT948 Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage BVCBO -40 -55 - V IC = -100µA Collector-Emitter Breakdown Voltage (Note 9) BVCER -40 -55 - V IC = -1µA, RB ≤ 1kΩ Collector-Emitter Breakdown Voltage (Note 9) BVCEO -20 -30 - V IC = -10mA Emitter-Base Breakdown Voltage BVEBO -7 -8 - V IE = -100µA Collector Cut-Off Current ICBO - - - - -50 -1 nA µ A VCB = -30V VCB = -30V, TA = +100°C Collector Cut-Off Current ICER R ≤ 1kΩ - - - - -50 -1 nA µA VCB = -30V VCB = -30V, TA = +100°C Emitter Cut-Off Current IEBO - - -10 nA VEB = -6V DC Current Transfer Static Ratio (Note 9) hFE 100 200 - - IC = -10mA, VCE = -1V 100 200 300 IC = -1A, VCE = -1V 75 160 - IC = -5A, VCE = -1V 60 130 - IC = -10A, VCE = -1V -15 40 - IC = -20A, VCE = -2V Collector-Emitter Saturation Voltage (Note 9) VCE(sat) - -60 -130 mV IC = -0.5A, IB = -10mA - -110 -180 IC = -2A, IB = -200mA - -200 -280 IC = -4A, IB = -400mA - -360 -450 IC = -6A, IB = -250mA Base-Emitter Saturation Voltage (Note 9) VBE(sat) - -1050 -1200 mV IC = -5A, IB = -300mA Base-Emitter Turn-On Voltage (Note 9) VBE(on) - -870 -1050 mV IC = -6A, VCE = -1V Transitional Frequency (Note 9) fT - 80 - MHz IC = -100mA, VCE = -10V, f = 50MHz Output Capacitance Cobo - 163 - pF VCB = -10V, f = 1MHz Switching Time tON - 120 - ns VCC = -10V, IC = -4A, IB1 = -IB2 = -400mA tOFF - 126 - Note: 9. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%. |
Codice articolo simile - FZT948_16 |
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Descrizione simile - FZT948_16 |
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