26

01.11.2003

4

3

2

1

3

±0.1

6.5

±0.2

0.7

3.25

2.3

1.65

BCP 54, BCP 55, BCP 56

General Purpose Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

NPN

Power dissipation – Verlustleistung

1.3 W

Plastic case

SOT-223

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.04 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2, 4 = C

3 = E

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

Grenzwerte (T

BCP 54

BCP 55

BCP 56

Collector-Emitter-voltage

B open

V

CE0

45 V

60 V

80 V

Collector-Base-voltage

E open

V

CB0

45 V

60 V

100 V

Emitter-Base-voltage

C open

V

EB0

5 V

Power dissipation – Verlustleistung

P

tot

Collector current – Kollektorstrom (DC)

I

C

1 A

Peak Collector current – Koll.-Spitzenstrom

I

CM

1.5 A

Peak Base current – Basis-Spitzenstrom

I

BM

200 mA

Junction temp. – Sperrschichttemperatur

T

j

150

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

Characteristics (T

Kennwerte (T

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I

I

CB0

–

–

100 nA

I

CB0

–

–

10

Emitter-Base cutoff current – Emitterreststrom

I

I

EB0

–

–

100 nA

I

V

CEsat

–

–

500 mV