4

01.11.2003

4

3

2

1

3

±0.1

6.5

±0.2

0.7

3.25

2.3

1.65

BCP 29, BCP 49

Darlington Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

NPN

Power dissipation – Verlustleistung

1.5 W

Plastic case

SOT-223

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.04 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B1 2, 4 = C 3 = E2

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

Grenzwerte (T

BCP 29

BCP 49

Collector-Emitter-voltage

B open

V

CE0

30 V

60 V

Collector-Base-voltage

E open

V

CB0

40 V

80 V

Emitter-Base-voltage

C open

V

EB0

10 V

Power dissipation – Verlustleistung

P

tot

Collector current – Kollektorstrom (DC)

I

C

500 mA

Peak Collector current – Kollektor-Spitzenstrom

I

CM

800 mA

Base current – Basisstrom (DC)

I

B

100 mA

Peak Base current – Basisstrom

I

BM

200 mA

Junction temperature – Sperrschichttemperatur

T

j

150

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

Characteristics (T

Kennwerte (T

Min.

Typ.

Max.

Collector-Base cutoff current – Kollektorreststrom

I

BCP 29

I

CB0

–

–

100 nA

I

BCP 49

I

CB0

–

–

100 nA

I

BCP 29

I

CB0

–

–

10

I

BCP 49

I

CB0

–

–

10

Emitter-Base cutoff current – Emitterreststrom

I

I

EB0

–

–

100 nA