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ST2N4401 Scheda tecnica(PDF) 1 Page - Nanjing International Group Co |
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ST2N4401 Scheda tecnica(HTML) 1 Page - Nanjing International Group Co |
1 / 4 page 2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor Collector Emitter Voltage: VCEO = 40 V Collector Dissipation: PC (max) = 625 mW On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current IC 600 mA Power Dissipation Ptot 625 mW Junction Temperature Tj 150 O C Storage Temperature Range TS -55 to +150 O C |
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