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ST18N10D Scheda tecnica(PDF) 2 Page - Stanson Technology |
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ST18N10D Scheda tecnica(HTML) 2 Page - Stanson Technology |
2 / 6 page ST18N10D N Channel Enhancement Mode MOSFET 18.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2009, Stanson Corp. ST18N10D 2009. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=100℃ ID 18.0 12.0 A Pulsed Drain Current IDM 65 A Continuous Source Current (Diode Conduction) IS 16 A Power Dissipation TA=25℃ PD 79 W Operation Junction Temperature TJ 150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 110 ℃ /W |
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