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TS3A227ERVAR Scheda tecnica(PDF) 7 Page - Texas Instruments |
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TS3A227ERVAR Scheda tecnica(HTML) 7 Page - Texas Instruments |
7 / 59 page TS3A227E www.ti.com SCDS358B – NOVEMBER 2014 – REVISED FEBRUARY 2015 Electrical Characteristics (continued) Unless otherwise noted the specification applies over the VDD and ambient operating temperature range. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SWITCH TIMING VDD = 2.5 V, 3.3 V, 4.5 V, RL = 300 Ω, CL = 50 pF Turn off time for S3PS, S3PR, S3GS, 5 µs S3GR VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) VDD = 2.5 V, 3.3 V, 4.5 V RPU = 1500 Ω, CL = 50 pF Turn off time for S1, S2, RING2 GNDFET, tOFF 5 µs SLEEVE GNDFET VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) VDD = 2.5 V, 3.3 V, 4.5 V RPU = 1500 Ω, CL = 50 pF Turn off time for RING2 DFET and 500 µs SLEEVE DFET VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) VDD = 2.5 V, 3.3 V, 4.5 V RL = 300 Ω, CL = 50 pF Turn on time for S3PS, S3PR, S3GS, 1 µs S3GR VSLEEVE_SENSE/RING2_SENSE = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) VDD = 2.5 V, 3.3 V, 4.5 V RPU = 1500 Ω, CL = 50 pF Turn on time for S1, S2, RING2 GNDFET, tON 35 µs SLEEVE GNDFET VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) VDD = 2.5 V, 3.3 V, 4.5 V RPU = 1500 Ω, CL = 50 pF Turn on time for RING2 DFET and 1 µs SLEEVE DFET VPU = 2.5 V (VDD = 2.5 V), 3.3 V (VDD = 3.3 V, VDD = 4.5 V) DIGITAL I/O MIC_PRESENT low level output voltage 0 0.4 VDD = 3.3 V, IOL = 10 mA VOL INT low level output voltage 0 0.4 V SDA low level output voltage VDD = 3.3 V, IOLMAX = 3 mA 0 0.4 SDA, SCL 1.2 VDD VIH Input logic high V VDD x DET_TRIGGER VDD 0.65 SDA, SCL 0 0.4 VIL Input logic low DET_TRIGGER 0 VDD x 0.4 Internal DET_TRIGGER pull-up RPU/DT VDD = 3.3 V, I/DET_TRIGGER = 1 µA 0.5 1 1.85 M Ω resistance Copyright © 2014–2015, Texas Instruments Incorporated Submit Documentation Feedback 7 Product Folder Links: TS3A227E |
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