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TAV-551 Scheda tecnica(PDF) 1 Page - Mini-Circuits

Il numero della parte TAV-551
Spiegazioni elettronici  E-PHEMT 0.45-6GHz
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Produttore elettronici  MINI [Mini-Circuits]
Homepage  http://www.minicircuits.com
Logo MINI - Mini-Circuits

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Ultra Low Noise, Low Current
E-PHEMT
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 1 of 13
TAV-551+
REV. B
M123887
ED-13285
TAV-551+
150319
0.45-6GHz
CASE STYLE: FG873
PRICE: $0.99 ea. QTY. (20)
Product Features
• Low Noise Figure, 0.5 dB
• Gain, 16 dB at 2 GHz
• High Output IP3, +25 dBm
• Low Current, 15mA
• Wide bandwidth
• External biasing and matching required
Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• WiMax
• WLAN
• UNII and HIPERLAN
General Description
TAV-551+ is an ultra-low noise, high IP3 transistor device, manufactured using E-PHEMT* technology
enabling it to work with a single positive supply voltage. It has outstanding Noise Figure, particularly be-
low 2.5 GHz, and when combining this noise figure with high IP3 performance in a single device it makes
it an ideal amplifier for demanding base station applications. We offer these units assembled into a com-
plete module, 50
Ω in/out, noise matched and fully specified. For more information please see our TAMP
family of models on our web site.
Function
Pad Number
Description
Source
2 & 4
Source terminal, normally connected to ground
Gate
3
Gate used for RF input
Drain
1
Drain used for RF output
simplified schematic and pin description
G AT E
S OUR C E
DR AIN
G AT E
DR AIN
S OUR C E
S OUR C E
* Enhancement mode Pseudomorphic High Electron Mobility Transistor.
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications


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