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TAV-541 Scheda tecnica(PDF) 2 Page - Mini-Circuits

Il numero della parte TAV-541
Spiegazioni elettronici  E-PHEMT 0.45-6GHz
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Produttore elettronici  MINI [Mini-Circuits]
Homepage  http://www.minicircuits.com
Logo MINI - Mini-Circuits

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E-PHEMT
TAV-541+
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Page 2 of 13
Symbol
Parameter
Condition
Min.
Typ.
Max.
Units
DC Specifications
V
GS
Operational Gate Voltage
V
DS=3V, IDS=60 mA
0.37
0.48
0.69
V
V
TH
Threshold Voltage
V
DS=3V, IDS=4 mA
0.18
0.26
0.38
V
I
DSS
Saturated Drain Current
V
DS=3V, VGS=0 V
1.0
5.0
µA
G
M
Transconductance
V
DS=3V, Gm=∆ IDS/∆VGS
∆V
GS=VGS1-VGS2
V
GS1=VGS at IDS=60 mA
V
GS2=VGS1+0.05V
230
392
560
mS
I
GSS
Gate leakage Current
V
GD=VGS=-3V
200
µA
RF Specifications, Z
0=50 Ohms (Figure 1)
NF(1)
Noise Figure
V
DS=3V, IDS=60 mA
f=0.9 GHz
0.4
dB
f=2.0 GHz
0.5
0.9
f=3.9 GHz
1.0
f=5.8 GHz
1.8
V
DS=4V, IDS=60 mA
f=2.0 GHz
0.4
Gain
Gain
V
DS=3V, IDS=60 mA
f=0.9 GHz
23.8
dB
f=2.0 GHz
15.5
17.9
18.9
f=3.9 GHz
12.7
f=5.8 GHz
9.5
V
DS=4V, IDS=60 mA
f=2.0 GHz
18.0
OIP3
Output IP3
V
DS=3V, IDS=60 mA
f=0.9 GHz
32.1
dBm
f=2.0 GHz
30.0
33.6
f=3.9 GHz
34.2
f=5.8 GHz
32.9
V
DS=4V, IDS=60 mA
f=2.0 GHz
35.9
P1dB(2)
Power output at 1 dB
Compression
V
DS=3V, IDS=60 mA
f=0.9 GHz
18.9
dBm
f=2.0 GHz
19.1
f=3.9 GHz
19.4
f=5.8 GHz
19.6
V
DS=4V, IDS=60 mA
f=2.0 GHz
21.1
Notes:
(1) Includes test board loss (measured in test board TB-154).
(2) Drain current bias allowed to increase during compression measurement.
(3) Operation of this device above any one of these parameters may cause permanent damage.
(4) Assumes DC quiescent conditions.
(5) I
GS is limited to 2 mA during test.
Absolute Maximum Ratings(3)
Symbol
Parameter
Max.
Units
VDS(4)
Drain-Source Voltage
5
V
VGS(4)
Gate-Source Voltage
-5 to 0.7
V
VGD(4)
Gate-Drain Voltage
-5 to 0.7
V
IDS(4)
Drain Current
120
mA
IGS
Gate Current
2
mA
PDISS
Total Dissipated Power
550
mW
PIN(5)
RF Input Power
17
dBm
TCH
Channel Temperature
150
°C
TOP
Operating Temperature
-40 to 85
°C
TSTD
Storage Temperature
-65 to 150
°C
ΘJC
Thermal Resistance
112
°C/W
Electrical Specifications at T
AMB=25°C, Frequency 0.45 to 6 GHz


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