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TAV-541 Scheda tecnica(PDF) 2 Page - Mini-Circuits |
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TAV-541 Scheda tecnica(HTML) 2 Page - Mini-Circuits |
2 / 13 page E-PHEMT TAV-541+ Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 2 of 13 Symbol Parameter Condition Min. Typ. Max. Units DC Specifications V GS Operational Gate Voltage V DS=3V, IDS=60 mA 0.37 0.48 0.69 V V TH Threshold Voltage V DS=3V, IDS=4 mA 0.18 0.26 0.38 V I DSS Saturated Drain Current V DS=3V, VGS=0 V — 1.0 5.0 µA G M Transconductance V DS=3V, Gm=∆ IDS/∆VGS ∆V GS=VGS1-VGS2 V GS1=VGS at IDS=60 mA V GS2=VGS1+0.05V — — 230 — — — — 392 — — — — 560 — — mS I GSS Gate leakage Current V GD=VGS=-3V 200 µA RF Specifications, Z 0=50 Ohms (Figure 1) NF(1) Noise Figure V DS=3V, IDS=60 mA f=0.9 GHz 0.4 — dB f=2.0 GHz 0.5 0.9 f=3.9 GHz 1.0 — f=5.8 GHz 1.8 — V DS=4V, IDS=60 mA f=2.0 GHz 0.4 Gain Gain V DS=3V, IDS=60 mA f=0.9 GHz — 23.8 — dB f=2.0 GHz 15.5 17.9 18.9 f=3.9 GHz — 12.7 — f=5.8 GHz 9.5 — V DS=4V, IDS=60 mA f=2.0 GHz — 18.0 OIP3 Output IP3 V DS=3V, IDS=60 mA f=0.9 GHz — 32.1 dBm f=2.0 GHz 30.0 33.6 f=3.9 GHz — 34.2 f=5.8 GHz — 32.9 V DS=4V, IDS=60 mA f=2.0 GHz 35.9 P1dB(2) Power output at 1 dB Compression V DS=3V, IDS=60 mA f=0.9 GHz 18.9 dBm f=2.0 GHz 19.1 f=3.9 GHz 19.4 f=5.8 GHz 19.6 V DS=4V, IDS=60 mA f=2.0 GHz 21.1 Notes: (1) Includes test board loss (measured in test board TB-154). (2) Drain current bias allowed to increase during compression measurement. (3) Operation of this device above any one of these parameters may cause permanent damage. (4) Assumes DC quiescent conditions. (5) I GS is limited to 2 mA during test. Absolute Maximum Ratings(3) Symbol Parameter Max. Units VDS(4) Drain-Source Voltage 5 V VGS(4) Gate-Source Voltage -5 to 0.7 V VGD(4) Gate-Drain Voltage -5 to 0.7 V IDS(4) Drain Current 120 mA IGS Gate Current 2 mA PDISS Total Dissipated Power 550 mW PIN(5) RF Input Power 17 dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTD Storage Temperature -65 to 150 °C ΘJC Thermal Resistance 112 °C/W Electrical Specifications at T AMB=25°C, Frequency 0.45 to 6 GHz |
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