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BF1101WR Scheda tecnica(PDF) 8 Page - NXP Semiconductors |
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BF1101WR Scheda tecnica(HTML) 8 Page - NXP Semiconductors |
8 / 15 page 1999 May 14 8 NXP Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR Fig.17 Input admittance as a function of frequency; typical values. VDS =5 V; VG2 =4 V. ID =12mA; Tamb =25 C. handbook, halfpage MGS311 102 10 1 10−1 10 102 103 f (MHz) yis (mS) bis gis Fig.18 Reverse transfer admittance and phase as a function of frequency; typical values. VDS =5 V; VG2 =4 V. ID =12mA; Tamb =25 C. handbook, halfpage MGS312 102 ϕrs (deg) −102 −1 −10 10 1 10 102 103 f (MHz) |yrs| (mS) |yrs| ϕrs Fig.19 Forward transfer admittance and phase as a function of frequency; typical values. VDS =5 V; VG2 =4 V. ID =12mA; Tamb =25 C. handbook, halfpage MGS313 102 ϕfs (deg) −102 −1 −10 10 1 10 102 103 f (MHz) |yfs| (mS) ϕfs |yfs| Fig.20 Output admittance as a function of frequency; typical values. VDS =5 V; VG2 =4 V. ID =12mA; Tamb =25 C. handbook, halfpage MGS314 10 10−1 1 10 102 103 f (MHz) yos (mS) bos gos |
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