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SPP07N65C3 Datasheet(Scheda tecnica) 1 Page - Infineon Technologies AG

Numero della parte SPP07N65C3
Dettagli  Cool MOS™ Power Transistor
Download  14 Pages
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Produttore  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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 1 page
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2004-04-07
Rev. 1.0
Page 1
SPP07N65C3, SPI07N65C3
SPA07N65C3
Cool MOS™ Power Transistor
VDS @ Tjmax
730
V
RDS(on)
0.6
ID
7.3
A
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• High peak current capability
• Improved transconductance
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31
P-TO220-3-1
P-TO262-3-1
2
P-TO220-3-1
2 3
1
P-TO220-3-31
1
2
3
Marking
07N65C3
07N65C3
07N65C3
Type
Package
Ordering Code
SPP07N65C3
P-TO220-3-1
Q67040-S4624
SPI07N65C3
P-TO262-3-1
Q67040-S4623
SPA07N65C3
P-TO220-3-31 Q67040-S4622
Maximum Ratings
Parameter
Symbol
Value
Unit
SPP_I
SPA
Continuous drain current
TC = 25 °C
TC = 100 °C
ID
7.3
4.6
7.31)
4.61)
A
Pulsed drain current, t
p limited by Tjmax
ID puls
21.9
21.9
A
Avalanche energy, single pulse
ID=1.5A, VDD=50V
EAS
230
230
mJ
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=2.5A, VDD=50V
EAR
0.5
0.5
Avalanche current, repetitive tAR limited by Tjmax
IAR
2.5
2.5
A
Gate source voltage
VGS
±20
±20
V
Gate source voltage AC (f >1Hz)
VGS
±30
±30
Power dissipation, TC = 25°C
Ptot
83
32
W
Operating and storage temperature
Tj , Tstg
-55...+150
°C




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