SPP02N80C3 datasheet(2/12 Pages) INFINEON

Il numero della parte	SPP02N80C3

Spiegazioni elettronici	Cool MOS Power Transistor

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Produttore elettronici	INFINEON [Infineon Technologies AG]

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2003-10-14

Page 2

SPP02N80C3

SPA02N80C3

Final data

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain Source voltage slope

VDS = 640 V, ID = 2 A, Tj = 125 °C

dv/dt

50

V/ns

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

RthJC

-

3

K/W

Thermal resistance, junction - case, FullPAK

RthJC_FP

-

4.1

Thermal resistance, junction - ambient, leaded

RthJA

-

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

-

80

Soldering temperature,

1.6 mm (0.063 in.) from case for 10s

Tsold

-

260

°C

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA

800

-

V

Drain-Source avalanche

breakdown voltage

V(BR)DS VGS=0V, ID=2A

-

870

-

Gate threshold voltage

VGS(th)

ID=120µA, VGS=VDS

2.1

3

3.9

Zero gate voltage drain current

IDSS

VDS=800V, VGS=0V,

Tj=25°C

Tj=150°C

-

0.5

-

5

50

µA

Gate-source leakage current

IGSS

VGS=20V, VDS=0V

-

100

nA

Drain-source on-state resistance RDS(on) VGS=10V, ID=1.2A

Tj=25°C

Tj=150°C

-

2.4

6.5

2.7

-

Ω

Gate input resistance

RG

f=1MHz, open drain

-

0.7

-

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