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SPI80N10L Scheda tecnica(PDF) 7 Page - Infineon Technologies AG |
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SPI80N10L Scheda tecnica(HTML) 7 Page - Infineon Technologies AG |
7 / 8 page 2002-08-14 Page 7 Preliminary data SPI80N10L SPP80N10L,SPB80N10L 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A , VDD = 25 V, RGS = 25 25 45 65 85 105 125 145 °C 185 Tj 0 50 100 150 200 250 300 350 400 450 500 550 600 mJ 700 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 0 40 80 120 160 200 nC 260 QGate 0 2 4 6 8 10 12 V 16 SPP80N10L 0,8 V DS max DS max V 0,2 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) -60 -20 20 60 100 140 °C 200 Tj 90 92 94 96 98 100 102 104 106 108 110 112 114 V 120 SPP80N10L |
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