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SPI80N10L Scheda tecnica(PDF) 6 Page - Infineon Technologies AG |
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SPI80N10L Scheda tecnica(HTML) 6 Page - Infineon Technologies AG |
6 / 8 page 2002-08-14 Page 6 Preliminary data SPI80N10L SPP80N10L,SPB80N10L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 58 A, VGS = 4.5 V -60 -20 20 60 100 140 °C 200 Tj 0 10 20 30 40 50 60 70 80 90 m 110 SPP80N10L typ 98% 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS -60 -30 0 30 60 90 120 °C 180 Tj 0 0.5 1 1.5 2 V 3 Id=2mA Id=250uA 11 Typ. capacitances C = f (VDS) parameter: VGS=0V, f=1 MHz 0 5 10 15 20 25 30 V 40 VDS 2 10 3 10 4 10 pF Ciss Coss Crss 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD 0 10 1 10 2 10 3 10 A SPP80N10L T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
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