SPI80N04S2-H4 datasheet(2/8 Pages) INFINEON

Il numero della parte	SPI80N04S2-H4

Spiegazioni elettronici	OptiMOS Power-Transistor

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Produttore elettronici	INFINEON [Infineon Technologies AG]

Homepage	http://www.infineon.com

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2 / 8 page

2003-05-08

Page 2

SPI80N04S2-H4

SPP80N04S2-H4,SPB80N04S2-H4

Thermal Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

Characteristics

Thermal resistance, junction - case

RthJC

-

0.35

0.5

K/W

Thermal resistance, junction - ambient, leaded

RthJA

-

62

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 3)

RthJA

-

62

40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

V(BR)DSS

40

-

V

Gate threshold voltage, VGS = VDS

ID=250µA

VGS(th)

2.1

3

4

Zero gate voltage drain current

VDS=40V, VGS=0V, Tj=25°C

VDS=40V, VGS=0V, Tj=125°C2)

IDSS

-

0.01

1

100

µA

Gate-source leakage current

VGS=20V, VDS=0V

IGSS

-

1

100

nA

Drain-source on-state resistance

VGS=10V, ID=80A

RDS(on)

-

3.4

4

m

Ω

1Current limited by bondwire ; with an R

thJC = 0.5K/W the chip is able to carry ID= 200A at 25°C, for detailed

information see app.-note ANPS071E available at www.infineon.com/optimos

2Defined by design. Not subject to production test.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

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