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SPI80N03S2L-06 Scheda tecnica(PDF) 2 Page - Infineon Technologies AG

Il numero della parte SPI80N03S2L-06
Spiegazioni elettronici  OptiMOS Power-Transistor
Download  8 Pages
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI80N03S2L-06 Scheda tecnica(HTML) 2 Page - Infineon Technologies AG

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2003-05-09
Page 2
SPI80N03S2L-06
SPP80N03S2L-06,SPB80N03S2L-06
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
0.68
1
K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 3)
RthJA
-
-
-
-
62
40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
V(BR)DSS
30
-
-
V
Gate threshold voltage, VGS = VDS
ID = 80 µA
VGS(th)
1.2
1.6
2
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
VDS=30V, VGS=0V, Tj=125°C
IDSS
-
-
0.01
10
1
100
µA
Gate-source leakage current
VGS=20V, VDS=0V
IGSS
-
1
100
nA
Drain-source on-state resistance
VGS=4.5V, ID=80A
VGS=4.5V, ID=80A, SMD version
RDS(on)
-
-
7
6.6
9.5
9.2
m
Drain-source on-state resistance4)
VGS=10V, ID=80A
VGS=10V, ID=80A, SMD version
RDS(on)
-
-
5
4.6
6.2
5.9
1Current limited by bondwire ; with an R
thJC = 1K/W the chip is able to carry I D= 120A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions


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