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VNH7100ASTR Scheda tecnica(PDF) 8 Page - STMicroelectronics |
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VNH7100ASTR Scheda tecnica(HTML) 8 Page - STMicroelectronics |
8 / 38 page Electrical specifications VNH7100AS 8/38 DocID028092 Rev 4 2.2 Thermal data VESD Electrostatic discharge (Human body model: R = 1.5 k Ω; C = 100 pF) –INA,INB, PWM – SEL0 –CS –VCC –Output 2 2 2 4 4 kV VESD Charge device model (CDM-AEC-Q100-011) 750 V Tc Junction operating temperature -40 to 150 °C TSTG Storage temperature -55 to 150 °C Table 4. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 5. Thermal data Symbol Parameter Max. value Unit Rthj-pin Thermal resistance junction-pin HSD 32 °C/W LSD 45 °C/W Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-2) (1) 1. Device mounted on two-layers 2s0p PCB. See Figure 24 °C/W Rthj-amb Thermal resistance junction-ambient (JEDEC JESD 51-2) (2) 2. Device mounted on four-layers 2s2p PCB. HSD 40.7 °C/W LSD 55.4 °C/W |
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