STD85N10F7AG datasheet(5/16 Pages) STMICROELECTRONICS

Il numero della parte	STD85N10F7AG

Spiegazioni elettronici	High avalanche ruggedness

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STD85N10F7AG

Electrical characteristics

16

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

70

A

ISDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

280

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 70 A, VGS = 0

-

1.1

V

trr

Reverse recovery time

ISD = 70 A, di/dt = 100 A/µs

VDD = 80 V, Tj=150 °C

(see Figure 18)

-70

ns

Qrr

Reverse recovery charge

-

125

nC

IRRM

Reverse recovery current

-

3.6

A

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