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STD80N6F6 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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3 / 15 page DocID023471 Rev 2 3/15 STD80N6F6 Electrical ratings 15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 60 V V GS Gate-source voltage ± 20 V I D (1) 1. Current limited by package Drain current (continuous) at T C = 25 °C 80 A I D (1) Drain current (continuous) at T C = 100 °C 80 A I DM (1) Drain current (pulsed) 320 A P TOT Total dissipation at T C = 25 °C 120 W Derating factor 0.8 W/°C T stg Storage temperature - 55 to 175 °C T j Operating junction temperature Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 1.25 °C/W R thj-a Thermal resistance junction-ambient max 50 °C/W |
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