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STP12N60M2 Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STP12N60M2
Spiegazioni elettronici  Extremely low gate charge
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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Electrical characteristics
STP12N60M2
4/13
DocID027902 Rev 1
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
600
V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 600 V
1
µA
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C
100
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
±10
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250 µA
2
3
4
V
RDS(on)
Static drain-source on-
resistance
VGS = 10 V, ID = 4.5 A
0.395
0.450
Ω
Table 6: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Input capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0 V
-
538
-
pF
Coss
Output capacitance
-
29
-
Crss
Reverse transfer
capacitance
-
1.1
-
Coss eq.
(1)
Equivalent output
capacitance
VDS = 0 to 480 V, VGS = 0 V
-
106
-
pF
RG
Intrinsic gate resistance
f = 1 MHz, ID = 0 A
-
7
-
Ω
Qg
Total gate charge
VDD = 400 V, ID = 9 A,
VGS = 10 V (see Figure 15:
"Gate charge test circuit")
-
16
-
nC
Qgs
Gate-source charge
-
2.3
-
Qgd
Gate-drain charge
-
8.5
-
Notes:
(1)
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS.
Table 7: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VDD = 300 V, ID = 4.5 A
RG = 4.7
Ω, VGS = 10 V
(see Figure 14: "Switching
times test circuit for
resistive load" and Figure
19: "Switching time
waveform")
-
9.2
-
ns
tr
Rise time
-
9.2
-
td(off)
Turn-off delay time
-
56
-
tf
Fall time
-
18
-


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