If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Supply Voltage (V

−0.5V to +7.0V

DC Input Diode Current (I

V

−20 mA

V

+20 mA

DC Output Diode Current (I

V

−20 mA

V

+20 mA

DC Output Voltage (V

−0.5V to V

DC Output Source/Sink Current (I

DC V

per Output Pin

Junction Temperature

CDIP

+175˚C

Storage Temperature

−65˚C to +150˚C

Recommended Operating

Conditions

Supply Voltage (V

’ACTQ

4.5V to 5.5V

Input Voltage (V

0VtoV

CC

Output Voltage (V

0VtoV

CC

Operating Temperature (T

54ACTQ

−55˚C to +125˚C

Minimum Input Edge Rate (dV/dt)

’ACTQ Devices

125 mV/ns

V

V

Note 1: Absolute maximum ratings are those values beyond which damage

to the device may occur. The databook specifications should be met, without

exception to ensure that the system design is reliable over its power supply,

temperature, and output/input loading variables. National does not recom-

DC Electrical Characteristics for ’ACTQ Family Devices

Symbol

Parameter

V

CC

(V)

54ACTQ

Units

Conditions

T

to +125˚C

Guaranteed Limits

V

IH

Minimum High

4.5

2.0

V

V

Input Voltage

5.5

2.0

or V

V

IL

Maximum Low

4.5

0.8

V

V

Input Voltage

5.5

0.8

or V

V

OH

Minimum High

4.5

4.4

V

I

Output Voltage

5.5

5.4

(Note 2)

V

4.5

3.70

V

I

5.5

4.70

I

V

OL

Maximum Low

4.5

0.1

V

I

Output Voltage

5.5

0.1

(Note 2)

V

4.5

0.50

V

I

5.5

0.50

I

I

OZ

Maximum

5.5

µA

V

TRI-STATE

Leakage Current

V

I

IN

Maximum Input

5.5

µA

V

Leakage Current

I

CCT

Maximum I

5.5

1.6

mA

V

I

CC

Max Quiescent

V

Supply Current

5.5

160.0

µA

or GND

I

OLD

Minimum Dynamic

5.5

50

mA

V

I

OHD

Output Current

(Note 3)

-50

mA

V

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