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FDD8N50NZ Scheda tecnica(PDF) 2 Page - Fairchild Semiconductor |
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FDD8N50NZ Scheda tecnica(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page ©2010 Fairchild Semiconductor Corporation FDD8N50NZ Rev. C1 www.fairchildsemi.com 2 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted. Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity FDD8N50NZTM FDD8N50NZ DPAK Tape and Reel 330 mm 16 mm 2500 units Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V, TC = 25oC 500 - - V ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25oC- 0.5 - V/oC IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V - - 1 μA VDS = 400 V, TC = 125oC- - 10 IGSS Gate to Body Leakage Current VGS = ±25 V, VDS = 0 V - - ±10 μA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 μA3.0 - 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 3.25 A - 0.77 0.85 Ω gFS Forward Transconductance VDS = 20 V, ID = 3.25 A - 6.3 - S Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1 MHz - 565 735 pF Coss Output Capacitance - 80 105 pF Crss Reverse Transfer Capacitance - 5 8 pF Qg(tot) Total Gate Charge at 10V VDS = 400 V, ID = 6.5 A, VGS = 10 V (Note 4) -14 18 nC Qgs Gate to Source Gate Charge - 4 - nC Qgd Gate to Drain “Miller” Charge - 6 - nC td(on) Turn-On Delay Time VDD = 250 V, ID = 6.5 A, RG = 25 Ω, VGS = 10 V (Note 4) -17 45 ns tr Turn-On Rise Time - 34 80 ns td(off) Turn-Off Delay Time - 43 95 ns tf Turn-Off Fall Time - 27 60 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 8 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 30 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.5 A - - 1.4 V trr Reverse Recovery Time VGS = 0 V, ISD = 6.5 A, dIF/dt = 100 A/μs - 228 - ns Qrr Reverse Recovery Charge - 1.43 - μC Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. L = 13.6 mH, IAS = 6.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 6.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4. Essentially Independent of Operating Temperature Typical Characteristics |
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