MMSF3350R2 datasheet(9/12 Pages) ONSEMI

Il numero della parte	MMSF3350R2

Spiegazioni elettronici	Single N?묬hannel Field Effect Transistor

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MMSF3350

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TYPICAL ELECTRICAL CHARACTERISTICS

RqJA(t) = r(t) RqJA

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TA = P(pk) RqJA(t)

t2

Figure 14. Thermal Response − Various Duty Cycles

t, TIME (seconds)

100

0

1

D = 0.5

1E−05

1E−03

1E−02

1E−01

0.2

0.01

0.1

0.02

0.05

0.1

1E+00

1E+01

1E+0

SINGLE PULSE

Figure 15. Thermal Response − Various

Mounting/Measurement Conditions

1E−04

1E+02

MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT

0.01

10

0

40

80

t, TIME (seconds)

Figure 16. Single Pulse Power

1

20

0.1

trr

tp

tb

Figure 17. Diode Reverse Recovery Waveform

60

MOUNTED ON 2, SQ. FR4 BOARD (1, SQ. 2

OZ. CU 0.06, THICK SINGLE SIDED).

t, TIME (seconds)

10,000

100

10

1E−03

1E−02

1E−01

1E+00

1E+01

1E+02

1E+

1

1000

Rthja, 1 INCH PAD

Rthjl, MIN PAD

CHIP

JUNCTION

R1

C1

R2

C2

R3

C3

R4

C4

R5

C5

AMBIENT

1

2

3

4

5

0.0758

1.12

11.0

60.8

63.8

1.07

16.9

276

1090

13,600

0.0707

0.456

4.95

31.6

45.4

0.417

3.10

46.7

318

12,500

0.0866

0.558

6.61

5.64

3.95

0.0142

0.106

1.59

289

9,580

RC

MIN PAD, ja

RC

1 INCH PAD,

ja

RC

MIN PAD, jl

Rthja, MIN PAD

DUTY CYCLE

10

0

10

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