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MMSF7N03ZR2 Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte MMSF7N03ZR2
Spiegazioni elettronici  N?묬hannel SO?? Power MOSFET
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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MMSF7N03Z
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
Vdc
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
VDGR
30
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 15
Vdc
Drain Current
− Continuous @ TA = 25°C (Note 1)
− Continuous @ TA = 70°C (Note 1)
− Pulsed Drain Current (Note 3)
ID
ID
IDM
7.5
5.6
60
Adc
Apk
Total Power Dissipation @ TA = 25°C (Note 1)
Linear Derating Factor (Note 1)
PD
2.5
20
Watts
mW/°C
Total Power Dissipation @ TA = 25°C (Note 2)
Linear Derating Factor (Note 2)
PD
1.6
12
Watts
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 15 Apk, L = 4.0 mH, RG = 25 Ω)
EAS
450
mJ
Thermal Resistance
− Junction to Ambient (Note 1)
− Junction to Ambient (Note 2)
RθJA
50
80
°C/W
1. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Seconds)
2. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ Steady State)
3. Repetitive rating; pulse width limited by maximum junction temperature.


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