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MMSF1308 Scheda tecnica(PDF) 1 Page - ON Semiconductor |
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MMSF1308 Scheda tecnica(HTML) 1 Page - ON Semiconductor |
1 / 9 page Publication Order Number: MMSF1308/D © Semiconductor Components Industries, LLC, 2006 August, 2006 − Rev. 2 1 MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. MiniMOS t devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc−dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • High Speed Switching Provides High Efficiency for DC/DC Converter • Miniature SO−8 Surface Mount Package − Saves Board Space • Diode Exhibits High Speed, With Soft Recovery MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Max Unit Drain−to−Source Voltage VDSS 30 Vdc Drain−to−Gate Voltage (RGS = 1.0 MΩ) VDGR 30 Vdc Gate−to−Source Voltage − Continuous VGS ± 20 Vdc Continuous Drain Current @ TA = 25°C (Note 1.) Pulsed Drain Current (Note 2.) ID IDM 7.0 50 Adc Total Power Dissipation @ TA = 25°C (Note 1.) PD 2.5 W Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C THERMAL RESISTANCE Junction−to−Ambient (Note 1.) RθJA 50 °C/W 1. When mounted on 1″ square FR−4 or G−10 board (VGS = 10 V, @ 10 Seconds) 2. Repetitive rating; pulse width limited by maximum junction temperature. 7 AMPERES 30 VOLTS RDS(on) = 30 mW Device Package Shipping ORDERING INFORMATION MMSF1308R2 SO−8 2500 Tape & Reel SO−8 CASE 751 STYLE 12 http://onsemi.com N−Channel LYWW MARKING DIAGRAM D S G S1308 L = Location Code Y = Year WW = Work Week Source 1 2 3 4 8 7 6 5 Top View Source Source Gate Drain Drain Drain Drain PIN ASSIGNMENT Preferred devices are recommended choices for future use and best overall value. 1 8 |
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