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SZTVS4201MR6T1G Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte SZTVS4201MR6T1G
Spiegazioni elettronici  Transient Voltage Suppressors
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Produttore elettronici  ONSEMI [ON Semiconductor]
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TVS4201MR6
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ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
IF
Forward Current
VF
Forward Voltage @ IF
Ppk
Peak Power Dissipation
C
Capacitance @ VR = 0 and f = 1.0 MHz
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
Uni−Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VC VBR
VF
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
VRWM
(Note 2)
5.0
V
Breakdown Voltage
VBR
IT=1 mA, (Note 3)
6.0
V
Reverse Leakage Current
IR
VRWM = 5 V
1.0
mA
Clamping Voltage
(tp = 8/20 ms per Figure 1)
VC
IPP = 1 A, Any I/O to GND
8.5
V
IPP = 5 A, Any I/O to GND
9.0
IPP = 8 A, Any I/O to GND
10
IPP = 25 A, Any I/O to GND
12
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins and GND
3.0
5.0
pF
Junction Capacitance
CJ
VR = 0 V, f=1 MHz between I/O Pins
1.5
3.0
pF
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT.
Figure 1. IEC61000−4−5 8/20
ms Pulse Waveform
100
90
80
70
60
50
40
30
20
10
0
020
40
60
80
t, TIME (
ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
Figure 2. Clamping Voltage vs. Peak Pulse Current
(tp = 8/20 ms per Figure 1)
20
10
0
05
PEAK PULSE CURRENT (A)
10
15
20
25
18
8
16
6
14
4
12
2
30
I/O−GND


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