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SZTVS4201MR6T1G Scheda tecnica(PDF) 2 Page - ON Semiconductor |
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SZTVS4201MR6T1G Scheda tecnica(HTML) 2 Page - ON Semiconductor |
2 / 6 page TVS4201MR6 www.onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. Uni−Directional TVS IPP IF V I IR IT VRWM VC VBR VF ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Conditions Min Typ Max Unit Reverse Working Voltage VRWM (Note 2) 5.0 V Breakdown Voltage VBR IT=1 mA, (Note 3) 6.0 V Reverse Leakage Current IR VRWM = 5 V 1.0 mA Clamping Voltage (tp = 8/20 ms per Figure 1) VC IPP = 1 A, Any I/O to GND 8.5 V IPP = 5 A, Any I/O to GND 9.0 IPP = 8 A, Any I/O to GND 10 IPP = 25 A, Any I/O to GND 12 Junction Capacitance CJ VR = 0 V, f=1 MHz between I/O Pins and GND 3.0 5.0 pF Junction Capacitance CJ VR = 0 V, f=1 MHz between I/O Pins 1.5 3.0 pF 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. Figure 1. IEC61000−4−5 8/20 ms Pulse Waveform 100 90 80 70 60 50 40 30 20 10 0 020 40 60 80 t, TIME ( ms) tP tr PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms PEAK VALUE IRSM @ 8 ms HALF VALUE IRSM/2 @ 20 ms Figure 2. Clamping Voltage vs. Peak Pulse Current (tp = 8/20 ms per Figure 1) 20 10 0 05 PEAK PULSE CURRENT (A) 10 15 20 25 18 8 16 6 14 4 12 2 30 I/O−GND |
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