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MSAGX75F60A Scheda tecnica(PDF) 2 Page - Microsemi Corporation |
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MSAGX75F60A Scheda tecnica(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) BVCES VGS = 0 V, IC = 250 µA 600 V Gate Threshold Voltage VGE(th) VCE = VGE, IC = 250 µA 2.5 5.0 V Gate-to-Emitter Leakage Current IGES VGE = ± 20V DC, VCE = 0 T J = 25 °C T J = 125 °C ±100 ±200 nA Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) ICES VCE =0.8 •BV CES TJ = 25 °C VGE = 0 V T J = 125 °C 200 1000 µA Collector-to-Emitter Saturation Voltage (1) VCE(sat) VGE= 15V, IC= 50A T J = 25 °C I C= 50A T J = 125 °C 2.5 2.7 V Forward Transconductance (1) gfs VCE ≥ 10 V; I C = 50 A 25 35 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Cies Coes Cres VGE = 0 V, VCE = 25 V, f = 1 MHz 4000 340 100 pF INDUCTIVE LOAD, Tj= 25 °°C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy td(on) tri td(off) tfi Eoff VGE = 15 V, V CE = 480 V, IC = 50 A, R G = 2.7 Ω, L= 100 µH note 2, 3 50 210 200 275 4.8 400 ns ns ns ns mJ INDUCTIVE LOAD, Tj= 125 °°C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy td(on) tri Eon td(off) tfi Eoff VGE = 15 V, V CE = 480 V, IC = 50 A, R G = 2.7 Ω, L= 100 µH note 2, 3 50 240 3 280 600 9.6 ns ns mJ ns ns mJ Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Qg Qge Qgc VGE = 15 V, V CE = 300V, I C = 50A 200 35 80 250 50 100 nC Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) switching times and losses may increase for larger V CE and/or RG values or higher junction temperatures. (3) switching losses include “tail” losses (4) Microsemi Corp. does not manufacture the igbt die; contact company for details. MSAGX75F60A |
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