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MSAEX8P50A Scheda tecnica(PDF) 2 Page - Microsemi Corporation |
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MSAEX8P50A Scheda tecnica(HTML) 2 Page - Microsemi Corporation |
2 / 2 page DESCRIPTION SYMBOL CONDITIONS MIN TYP. MAX UNIT Drain-to-Source Breakdown Voltage (Gate Shorted to Source) BVDSS VGS = 0 V, ID = 250 µA 500 V Temperature Coefficient of the Drain-to-Source Breakdown Voltage ∆BV DSS/ ∆T J 0.054 %/ °C Gate Threshold Voltage VGS(th) VDS = VGS, ID =250 µA 2.0 4.5 V Temperature Coefficient of the Threshold Voltage ∆V GSth / ∆T J 0.12 %/ °C Gate-to-Source Leakage Current IGSS VGS = ± 20V DC, VDS = 0 TJ = 25 °C T J = 125 °C ±100 ±200 nA Drain-to-Source Leakage Current (Zero Gate Voltage Drain Current) IDSS VDS =0.8 •BV DSS TJ = 25 °C VGS = 0 V T J = 125 °C 200 1000 µA Static Drain-to-Source On-State Resistance (1) RDS(on) VGS= 10V, ID= 4 A TJ = 25 °C ID= 4 A TJ = 125 °C 2.2 1.2 Ω Temperature Coefficient of the Drain-to-Source Resistance ∆R DSon/ ∆T J 0.6 %/ °C Forward Transconductance (1) gfs VDS ≥ 10 V; I D = 8 A 4 5 S Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz 3400 450 175 pF Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) tr td(off) tf VGS = 10 V, VDS = 250 V, ID = 4 A, RG = 2.00 Ω 33 27 35 35 ns Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Qg(on) Qgs Qgd VGS = 10 V, VDS = 250V, ID = 4 A 130 32 64 nC Body Diode Forward Voltage (1) VSD IF = IS, VGS = 0 V 1.2 1.5 V Reverse Recovery Time (Body Diode) trr IF = 10 A, 25 C -di/dt = 100 A/ µs, 125 C 35 50 tbd ns Reverse Recovery Charge Qrr IF = 10 A, 25 C di/dt = 100 A/ µs, 125 C 125 250 tbd µC Electrical Parameters @ 25 °°C (unless otherwise specified) Notes (1) Pulse test, t ≤≤ 300 µµs, duty cycle δδ ≤≤ 2% (2) Microsemi Corp. does not manufacture the mosfet die; contact company for details. MSAEX8P50A Datasheet# MSC0307A |
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