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SIZ916DT Scheda tecnica(PDF) 1 Page - Vishay Telefunken |
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SIZ916DT Scheda tecnica(HTML) 1 Page - Vishay Telefunken |
1 / 14 page SiZ916DT www.vishay.com Vishay Siliconix S15-1672-Rev. B, 20-Jul-15 1 Document Number: 62721 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Dual N-Channel 30 V (D-S) MOSFETs Ordering Information: SiZ916DT-T1-GE3 (lead (Pb)-free and halogen-free) FEATURES • TrenchFET® Gen IV power MOSFETs • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • CPU core power • Computer/server peripherals • Synchronous buck converter •POL • Telecom DC/DC Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 62 °C/W for channel-1 and 55 °C/W for channel-2. g. TC = 25 °C. PRODUCT SUMMARY VDS (V) RDS(on) () (MAX.) ID (A) g Qg (TYP.) Channel-1 30 0.00640 at VGS = 10 V 16 a 7.2 nC 0.01000 at VGS = 4.5 V 16 a Channel-2 30 0.00130 at VGS = 10 V 40 a 45 nC 0.00175 at VGS = 4.5 V 40 a PowerPAIR® 6 x 5 Top View 1 6 mm 1 6 mm 5 mm Bottom View 1 G 1 2 D 1 4 D 1 3 D 1 S1/D2 (Pin 9) D1 S 2 5 S 2 6 G 2 8 S 2 7 D1 S2 N-Channel 2 MOSFET N-Channel 1 MOSFET G1 S1/D2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS +20, -16 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 16 a 40 a A TC = 70 °C 16 a 40 a TA = 25 °C 16 a, b, c 40 a, b, c TA = 70 °C 15.5 b, c 38.8 b, c Pulsed Drain Current (t = 300 μs) IDM 80 100 Continuous Source Drain Diode Current TC = 25 °C IS 19 28 TA = 25 °C 3.25 b, c 4.3 b, c Single Pulse Avalanche Current L = 0.1 mH IAS 10 15 Single Pulse Avalanche Energy EAS 5 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 22.7 100 W TC = 70 °C 14.5 64 TA = 25 °C 3.9 b, c 5.2 b, c TA = 70 °C 2.5 b, c 3.3 b, c Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 °C Soldering Recommendations (Peak Temperature) d, e 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL CHANNEL-1 CHANNEL-2 UNIT TYP. MAX. TYP. MAX. Maximum Junction-to-Ambient b, f t 10 s RthJA 25 32 19 24 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.4 5.5 1 1.25 |
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