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IRF135SA204 Scheda tecnica(PDF) 2 Page - International Rectifier |
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IRF135SA204 Scheda tecnica(HTML) 2 Page - International Rectifier |
2 / 11 page 2 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback September 17, 2015 IRG5K50P5K50PM06E IRF135SA204 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 135 ––– ––– V VGS = 0V, ID = 250µA V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.14 ––– V/°C Reference to 25°C, ID = 5mA RDS(on) Static Drain-to-Source On-Resistance ––– 4.7 5.9 m VGS = 10V, ID = 96A VGS(th) Gate Threshold Voltage 2.0 3.0 4.0 V VDS = VGS, ID = 250µA IDSS Drain-to-Source Leakage Current ––– ––– 20 µA VDS =135 V, VGS = 0V ––– ––– 250 VDS = 135V,VGS = 0V,TJ =125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V RG Gate Resistance ––– 2.2 ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 146µH, RG = 50, IAS = 96A, VGS =10V. ISD 96A, di/dt 2200A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Limited by TJmax, starting TJ = 25°C, L = 1.0mH, RG = 50, IAS = 49A, VGS =10V. Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy 670 mJ EAS (Thermally limited) Single Pulse Avalanche Energy 1280 IAR Avalanche Current See Fig 15, 16, 23a, 23b A EAR Repetitive Avalanche Energy mJ Absolute Maximum Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 160 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113 IDM Pulsed Drain Current 608 PD @TC = 25°C Maximum Power Dissipation 500 W Linear Derating Factor 3.3 W/°C VGS Gate-to-Source Voltage ± 20 V TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units RJC Junction-to-Case ––– 0.3 RJA Junction-to-Ambient (PCB Mount) ––– 40 °C/W |
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