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TC1041CEOA Scheda tecnica(PDF) 2 Page - Microchip Technology |
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TC1041CEOA Scheda tecnica(HTML) 2 Page - Microchip Technology |
2 / 14 page TC1041 DS21346B-page 2 © 2002 Microchip Technology Inc. 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................6.0V Voltage on Any Pin .......... (VSS – 0.3V) to (VDD +0.3V) Junction Temperature....................................... +150°C Operating Temperature Range............. -40°C to +85°C Storage Temperature Range .............. -55°C to +150°C *Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TC1041 ELECTRICAL SPECIFICATIONS Electrical Characteristics: Typical values apply at 25°C and VDD = 3.0V. Minimum and maximum values apply for TA =-40°to +85°C and VDD = 1.8V to 5.5V, unless otherwise specified. Symbol Parameter Min Typ Max Units Test Conditions VDD Supply Voltage 1.8 — 5.5 V IQ Supply Current Operating — 10 15 µAAll Outputs Open Comparators VIR IN+ Voltage Range VSS –0.2 — VDD +0.2 V VOS Input Offset Voltage -5 -5 —+5 +5 mV mV VDD =3V, TA =25°C TA =-40°C to 85°C (Note 1) IB Input Bias Current — — ±100 pA TA =25°C, IN+=VDD to VSS VOH Output High Voltage VDD –0.3 — — V RL =10kΩ to VSS VOL Output Low Voltage — — 0.3 V RL =10kΩ to VDD CMRR Common Mode Rejection Ratio 66 — — dB TA =25°C, VDD =5V VCM =VDD to VSS PSRR Power Supply Rejection Ratio 60 — — dB TA =25°C VDD =1.8V to 5V ISRC Output Source Current 1 — — mA IN+ = VDD, Output ShortedtoVSS VDD =1.8V ISINK Output Sink Current 2 — — mA IN+ = VSS, Output ShortedtoVDD VDD =1.8V VHYST Voltage Range at HYST Pin VREF –0.08 — VREF V IHYST Hysteresis Input Current — — ±100 nA tPD1 Response Time — 4 — µsec 100mV Overdrive, CL = 100pF tPD2 Response Time — 6 — µsec 10mV Overdrive, CL = 100pF Voltage Reference VREF Reference Voltage 1.176 1.200 1.224 V IREF(SOURCE) Source Current 50 — — µA IREF(SINK) Sink Current 50 — — µA CL(REF) Load Capacitance — — 100 pF EVREF Noise Voltage — 20 — µVRMS 100Hz to 100kHz eVREF Noise Voltage Density — 1.0 — µV/√Hz 1kHz Note 1: VOS is measured as (VUT +VLT –2VREF)/2 where VUT is the upper hysteresis threshold and VLT is the lower hysteresis threshold with VREF –VHYST set to 10mV. This represents the assymetry of the hysteresis thresholds around VREF. |
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